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Features
CAS No.: | 25617-98-5 |
Linear Formula: | InN |
Purity: | 99% - 99.999% |
Appearance: | Black Powder |
Particle Size: | −100 Mesh or Customized |
Indium Nitride Description
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. It can be prepared by reacting In2O3 with ammonia at high temperature.
Indium nitride has semiconductor and electroluminescence properties. It can be used in In the manufacture of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.
Indium Nitride Applications and Related Industries
● Semiconductor
● High-efficiency solar cells
● Chemical sensors
● Light-emitting diodes
● Laser diodes
● Optoelectronics
● Electronics
● Research & Laboratory
Chemical Identifiers
Linear Formula | InN |
MDL Number | MFCD00016152 |
EC No. | 247-130-6 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | 117560 |
IUPAC Name | azanylidyneindigane |
SMILES | [In]#N |
InchI Identifier | InChI=1S/In.N |
InchI Key | NWAIGJYBQQYSPW-UHFFFAOYSA-N |
Indium Nitride Properties (Theoretical)
Compound Formula | InN |
Molecular Weight | 128.825 |
Appearance | black powder |
Melting Point | 1100 °C |
Boiling Point | N/A |
Density | 6.81 g/cm3 |
Solubility in H2O | N/A |
Exact Mass | 128.907 |
Monoisotopic Mass | 128.907 |
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