Indium Phosphide

Indium Phosphide Description

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

InP can be prepared from the reaction of white phosphorus and indium iodide at 400°C, also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for optoelectronic devices based on epitaxial indium gallium arsenide.

Indium Phosphide Applications and Related Industries

● Optoelectronic components

● High-speed electronics

● Photovoltaics

● Ceramics

● Solar Energy

● Research & Laboratory

Chemical Identifiers

Indium Phosphide Properties (Theoretical)